Low Power High-Speed Circuits with InAs-based HBT Technology
نویسندگان
چکیده
High indium content In0.86Al0.14As/In0.86Ga0.14As double heterojunction bipolar transistors (DHBTs) were grown on InP substrates using thin 6.0 Å metamorphic compositionally graded buffer layers. Good DC and RF characteristics have been demonstrated, with high gain (~30), breakdown voltage greater than 2.5 V, turn-on voltage reduction by a factor of two compared to existing InP bipolar technology, peak frequencies fT and fMAX exceeding 150 GHz (measured at low current without applying any voltage at the base-collector junction). Fully functional circuits with complexity ranging from 20 to 1100 transistors have been successfully demonstrated on thin 6.0 Å metamorphic buffers, with power dissipation reduced by a factor of 2 compared to equivalent circuits designed with InP.
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